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B. Process Development Tool
Lithography modeling has also proven to be an invaluable tool for the development of new
lithographic processes or equipment. Some of the more common uses include the optimization of dye
loadings in photoresist [23,24], simulation of substrate reflectivity [25,26], the applicability and
optimization of top and bottom antireflection coatings [27,28], and simulation of the effect of bandwidth on
swing curve amplitude [29,30]. In addition, simulation has been used to help understand the use of thick
resists for thin film head manufacture [31] as well as other non-semiconductor applications. Modeling is
used extensively by makers of photoresist to evaluate new formulations [32,33] and to determine adequate
measures of photoresist performance for quality control purposes [34]. Resist users often employ modeling
as an aid for new resist evaluations. On the exposure tool side, modeling has become an indispensable part
of the optimization of the numerical aperture and partial coherence of a stepper [35-37] and in the
understanding of the print bias between dense and isolated lines [38]. The use of optical proximitycorrection software requires rules on how to perform the corrections, which are often generated with the
help of lithography simulation [39].
As a development tool, lithography simulation excels due to its speed and cost-effectiveness.
Process development usually involves running numerous experiments to determine optimum process
conditions, shake out possible problems, determine sensitivity to variables, and write specification limits on
the inputs and outputs of the process. These activities tend to be both time consuming and costly. Modeling
offers a way to supplement laboratory experiments with simulation experiments to speed up this process and
reduce costs. Considering that a single experimental run in a wafer fabrication facility can take from hours
to days, the speed advantage of simulation is considerable. This allows a greater number of simulations than
would be practical (or even possible) in the fab.